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| TLP4027G TOSHIBA Photocoupler Photorelay TLP4027G Telecommunication Measurement Equipment Security Equipment FA The Toshiba TLP4027G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage. * * * * * * Normally closed (1-form-B) device, normally opened (1-form-A) device Peak off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 90 mA (max) On-state resistance: 50 (max) Isolation voltage: 1500 Vrms (min) Unit: mm Pin Configuration (top view) JEDEC 1 8 11-10H1 JEITA TOSHIBA Weight: 0.2 g (typ.) 2 7 1: Anode (1b) 3 6 2: Cathode (1b) 3: Anode (1a) 4: Cathode (1a) 5: Drain D1 (1a) 6: Drain D2 (1a) 4 5 7: Drain D3 (1b) 8: Drain D4 (1b) 1 2003-01-14 TLP4027G Maximum Ratings (Ta = 25C) Characteristics Forward current Forward current derating (Ta > 25C) = LED Peak forward current Reverse voltage Junction temperature Off-state output terminal voltage One channel operation On-state current Detector Two channel operations (1a1b simultaneous operation) One channel operation Two channel operations (1a1b simultaneous operation) DION/C Tj Tstg Topr Tsol (Note 1) BVS -0.9 125 -55 to 125 -40 to 85 260 1500 mA/C C C C C Vrms ION 90 mA Symbol IF DIF/C IFP VR Tj VOFF Rating 50 -0.5 1 5 125 350 Unit mA mA/C A V C V On-state current derating (Ta > 25C) = Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min, R.H. < 60%) = Note 1: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. Recommended Operating Conditions Characteristics Supply voltage Forward current On-state current Operating temperature Symbol VDD IF ION Topr Min 3/4 5 3/4 -20 Typ. 3/4 10 3/4 3/4 Max 280 25 90 65 Unit V mA mA C Electrical Characteristics (Ta = 25C) Characteristics Forward voltage LED Reverse current Capacitance Detector Off-state current Capacitance (1b) Capacitance (1a) Symbol VF IR CT IOFF COFF IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 350 V V = 0, f = 1 MHz, IF = 5 mA V = 0, f = 1 MHz Test Condition Min 1.0 3/4 3/4 3/4 3/4 3/4 Typ. 1.15 3/4 30 3/4 30 30 Max 1.3 10 3/4 1 3/4 3/4 Unit V mA pF mA pF 2 2003-01-14 TLP4027G Coupled Electrical Characteristics (Ta = 25C) Characteristics Trigger LED current Form 1a 1b 1a 1b (Note 2) 3/4 Symbol IFT IFC IFC IFT RON Test Condition ION = 90 mA IOFF = 10 mA IOFF = 10 mA ION = 90 mA ION = 90 mA, t < 1s ION = 90 mA Min 3/4 Typ. 1 Max 3 Unit mA Return LED current 0.1 3/4 3/4 3/4 30 40 3/4 35 50 mA On-state resistance W Note 2: 1-form-A: IF = 5 mA, 1-form-B: IF = 0 mA Isolation Characteristics (Ta = 25C) Characteristics Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. < 60% = AC, 1 min Isolation voltage BVS AC, 1 s, in oil DC, 1 min, in oil Min 3/4 5 1010 1500 3/4 3/4 Typ. 0.8 1014 3/4 3000 3000 Max 3/4 3/4 3/4 3/4 3/4 Unit pF W Vrms Vdc Switching Characteristics (Ta = 25C) Characteristics 1b Turn-on time Turn-off time Turn-on time Turn-off time Symbol tON tOFF tON tOFF Test Condition RL = 200 W VDD = 20 V, IF = 5 mA RL = 200 W VDD = 20 V, IF = 5 mA Min 3/4 (Note 3) 3/4 3/4 (Note 3) 3/4 Typ. 0.25 0.5 0.3 0.15 Max 1 1 1 1 Unit ms 1a ms Note 3: Switching time test circuit IF 1b VDD IF VOUT 2 7 VOUT 10% tON 90% tOFF 1 8 RL IF 3 1a 6 RL VDD IF VOUT 4 5 VOUT 10% tON 90% tOFF 3 2003-01-14 TLP4027G Characteristics curves for 1-form-A/B IF - Ta 100 160 ION - Ta (mA) Allowable on-state current ION 120 80 40 (mA) Allowable forward current IF 80 60 40 20 0 -20 0 20 40 60 80 100 120 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (C) Ambient temperature Ta (C) IF - VF 100 Ta = 25C 30 (mA) Forward current IF 10 3 1 0.3 0.1 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward voltage VF (V) 4 2003-01-14 TLP4027G Characteristics curves for 1-form-B RON - Ta 50 ION = 90 mA 5 ION = 90 mA t<1s 40 t<1s 4 IFC - Ta (W) RON On-state resistance 30 IFC 3 20 Trigger LED current (mA) 2 10 1 0 -40 -20 0 20 40 60 80 100 0 -40 -20 0 20 40 60 80 100 Ambient temperature Ta (C) Ambient temperature Ta (C) IOFF - Ta 1000 VOFF = 350 V 150 Ta = 25C ION - VON (nA) Off-state current IOFF On-state current ION 100 (mA) 300 IF = 5 mA 100 50 30 0 10 -50 3 -100 1 0 20 40 60 80 100 -150 -4 -3 -2 -1 0 1 2 3 4 Ambient temperature Ta (C) On-state voltage VON (V) tON, tOFF - IF 3000 Ta = 25C VDD = 20 V, RL = 200 W 3000 VDD = 20 V, RL = 200 W IF = 5 mA 1000 tOFF tON, tOFF - Ta (ms) 1000 tON, tOFF 300 tON, tOFF tON (ms) 300 tON 100 Switching time 30 tOFF Switching time 100 30 10 1 3 5 10 30 50 100 300 10 -40 -20 0 20 40 60 80 100 Input current IF (mA) Ambient temperature Ta (C) 5 2003-01-14 TLP4027G Characteristics curves for 1-form-A RON - Ta 50 ION = 90 mA IF = 5 mA t<1s 5 ION = 90 mA t<1s 4 IFT - Ta 40 RON 30 IFC 3 20 Trigger LED current On-state resistance (mA) (W) 2 10 1 0 -20 0 20 40 60 80 100 0 -40 -20 0 20 40 60 80 100 Ambient temperature Ta (C) Ambient temperature Ta (C) IOFF - Ta 100 VOFF = 350 V 150 Ta = 25C ION - VON (nA) 30 (mA) 100 IF = 5 mA Off-state current IOFF 10 On-state current ION -20 50 0 3 -50 1 -100 -40 0 20 40 60 80 100 -150 -4 -3 -2 -1 0 1 2 3 4 Ambient temperature Ta (C) On-state voltage VON (V) tON, tOFF - IF 2000 Ta = 25C 1000 VDD = 20 V, RL = 200 W 2000 tON, tOFF - Ta VDD = 20 V, RL = 200 W 1000 IF = 5 mA tON 300 (ms) tON, tOFF 300 tON Switching time Switching time 100 tON, tOFF (ms) 100 tOFF 30 tOFF 10 1 3 10 30 100 30 10 -40 -20 0 20 40 60 80 100 Input current IF (mA) Ambient temperature Ta (C) 6 2003-01-14 TLP4027G RESTRICTIONS ON PRODUCT USE 020704EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium (GaAs) Arsenide is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break, cut, crushu or dissolve chemically. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2003-01-14 |
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